COMMENTS ON HIGH-SPEED PHOTORESPONSE MECHANISM OF A GAAS-MESFET

被引:15
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GAMMEL, JC
BALLANTYNE, JM
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10.1143/JJAP.19.L273
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O59 [应用物理学];
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页码:L273 / L275
页数:3
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[21]   GAAS-MESFET AND RELATED PROCESSES [J].
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[23]   PHOTOAVALANCHE EFFECTS IN A GAAS-MESFET [J].
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[24]   GAAS-MESFET FOR DIGITAL APPLICATION [J].
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[27]   ORIENTATION EFFECT ON PLANAR GAAS-MESFET [J].
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MEIER, H ;
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[30]   COMPLEMENTARY GAAS-MESFET LOGIC GATES [J].
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FURE, BJ ;
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