首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
COMMENTS ON HIGH-SPEED PHOTORESPONSE MECHANISM OF A GAAS-MESFET
被引:15
作者
:
GAMMEL, JC
论文数:
0
引用数:
0
h-index:
0
GAMMEL, JC
BALLANTYNE, JM
论文数:
0
引用数:
0
h-index:
0
BALLANTYNE, JM
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1980年
/ 19卷
/ 05期
关键词
:
D O I
:
10.1143/JJAP.19.L273
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L273 / L275
页数:3
相关论文
共 50 条
[21]
GAAS-MESFET AND RELATED PROCESSES
DAGA, OP
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
DAGA, OP
SINGH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
SINGH, JK
SINGH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
SINGH, JK
SINGH, BR
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
SINGH, BR
KOTHARI, HS
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
KOTHARI, HS
KHOKLE, WS
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
KHOKLE, WS
BULLETIN OF MATERIALS SCIENCE,
1990,
13
(1-2)
: 99
-
112
[22]
GAAS-MESFET SIMULATION WITH MINIMOS
LINDORFER, P
论文数:
0
引用数:
0
h-index:
0
LINDORFER, P
SELBERHERR, S
论文数:
0
引用数:
0
h-index:
0
SELBERHERR, S
GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989,
1989,
: 277
-
280
[23]
PHOTOAVALANCHE EFFECTS IN A GAAS-MESFET
MADJAR, A
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Microwave Lightwave Engineering, Drexel University, Philadelphia, Pennsylvania
MADJAR, A
HERCZFELD, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Microwave Lightwave Engineering, Drexel University, Philadelphia, Pennsylvania
HERCZFELD, PR
PAOLLELA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Microwave Lightwave Engineering, Drexel University, Philadelphia, Pennsylvania
PAOLLELA, A
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,
1990,
3
(02)
: 60
-
62
[24]
GAAS-MESFET FOR DIGITAL APPLICATION
KOHN, E
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH,INST HALBLEITER TECH,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH,INST HALBLEITER TECH,D-5100 AACHEN,FED REP GER
KOHN, E
SOLID-STATE ELECTRONICS,
1977,
20
(01)
: 29
-
&
[25]
HIGH-GAIN GAAS-MESFET OP AMP
XIAO, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
XIAO, S
SALAMA, CAT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
SALAMA, CAT
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,
1994,
5
(02)
: 169
-
173
[26]
THE EFFECT OF PARASITIC CAPACITANCES ON THE CIRCUIT SPEED OF GAAS-MESFET RING OSCILLATORS
CHANG, CTM
论文数:
0
引用数:
0
h-index:
0
CHANG, CTM
NAMORDI, MR
论文数:
0
引用数:
0
h-index:
0
NAMORDI, MR
WHITE, WA
论文数:
0
引用数:
0
h-index:
0
WHITE, WA
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(11)
: 1805
-
1809
[27]
ORIENTATION EFFECT ON PLANAR GAAS-MESFET
LEE, CP
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
LEE, CP
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ZUCCA, R
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
WELCH, BM
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(11)
: 2196
-
2196
[28]
PERFORMANCE OF HYBRID GAAS-MESFET LOGIC
STARTIN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Systems Development Department, Ipswich, IP4 IDW, Lower Brook Street
STARTIN, RA
INTERNATIONAL JOURNAL OF ELECTRONICS,
1979,
46
(02)
: 161
-
165
[29]
SUBMICROMETER GAAS-MESFET WITH SHALLOW CHANNEL AND VERY HIGH TRANSCONDUCTANCE
VANZEGHBROECK, BJ
论文数:
0
引用数:
0
h-index:
0
VANZEGHBROECK, BJ
PATRICK, W
论文数:
0
引用数:
0
h-index:
0
PATRICK, W
MEIER, H
论文数:
0
引用数:
0
h-index:
0
MEIER, H
VETTIGER, P
论文数:
0
引用数:
0
h-index:
0
VETTIGER, P
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(03)
: 118
-
120
[30]
CHARACTERIZATION OF GAAS-MESFET GATE CAPACITANCES
SHIH, CC
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
SHIH, CC
SHEU, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
SHEU, BJ
LE, HM
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
LE, HM
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1988,
23
(03)
: 878
-
880
←
1
2
3
4
5
→
共 50 条
[21]
GAAS-MESFET AND RELATED PROCESSES
DAGA, OP
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
DAGA, OP
SINGH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
SINGH, JK
SINGH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
SINGH, JK
SINGH, BR
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
SINGH, BR
KOTHARI, HS
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
KOTHARI, HS
KHOKLE, WS
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani
KHOKLE, WS
BULLETIN OF MATERIALS SCIENCE,
1990,
13
(1-2)
: 99
-
112
[22]
GAAS-MESFET SIMULATION WITH MINIMOS
LINDORFER, P
论文数:
0
引用数:
0
h-index:
0
LINDORFER, P
SELBERHERR, S
论文数:
0
引用数:
0
h-index:
0
SELBERHERR, S
GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989,
1989,
: 277
-
280
[23]
PHOTOAVALANCHE EFFECTS IN A GAAS-MESFET
MADJAR, A
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Microwave Lightwave Engineering, Drexel University, Philadelphia, Pennsylvania
MADJAR, A
HERCZFELD, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Microwave Lightwave Engineering, Drexel University, Philadelphia, Pennsylvania
HERCZFELD, PR
PAOLLELA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Center for Microwave Lightwave Engineering, Drexel University, Philadelphia, Pennsylvania
PAOLLELA, A
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,
1990,
3
(02)
: 60
-
62
[24]
GAAS-MESFET FOR DIGITAL APPLICATION
KOHN, E
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH,INST HALBLEITER TECH,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH,INST HALBLEITER TECH,D-5100 AACHEN,FED REP GER
KOHN, E
SOLID-STATE ELECTRONICS,
1977,
20
(01)
: 29
-
&
[25]
HIGH-GAIN GAAS-MESFET OP AMP
XIAO, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
XIAO, S
SALAMA, CAT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,JM HAM CHAIR MICROELECTR,TORONTO M5S 1A4,ONTARIO,CANADA
SALAMA, CAT
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING,
1994,
5
(02)
: 169
-
173
[26]
THE EFFECT OF PARASITIC CAPACITANCES ON THE CIRCUIT SPEED OF GAAS-MESFET RING OSCILLATORS
CHANG, CTM
论文数:
0
引用数:
0
h-index:
0
CHANG, CTM
NAMORDI, MR
论文数:
0
引用数:
0
h-index:
0
NAMORDI, MR
WHITE, WA
论文数:
0
引用数:
0
h-index:
0
WHITE, WA
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(11)
: 1805
-
1809
[27]
ORIENTATION EFFECT ON PLANAR GAAS-MESFET
LEE, CP
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
LEE, CP
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ZUCCA, R
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360
WELCH, BM
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(11)
: 2196
-
2196
[28]
PERFORMANCE OF HYBRID GAAS-MESFET LOGIC
STARTIN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
Integrated Systems Development Department, Ipswich, IP4 IDW, Lower Brook Street
STARTIN, RA
INTERNATIONAL JOURNAL OF ELECTRONICS,
1979,
46
(02)
: 161
-
165
[29]
SUBMICROMETER GAAS-MESFET WITH SHALLOW CHANNEL AND VERY HIGH TRANSCONDUCTANCE
VANZEGHBROECK, BJ
论文数:
0
引用数:
0
h-index:
0
VANZEGHBROECK, BJ
PATRICK, W
论文数:
0
引用数:
0
h-index:
0
PATRICK, W
MEIER, H
论文数:
0
引用数:
0
h-index:
0
MEIER, H
VETTIGER, P
论文数:
0
引用数:
0
h-index:
0
VETTIGER, P
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(03)
: 118
-
120
[30]
CHARACTERIZATION OF GAAS-MESFET GATE CAPACITANCES
SHIH, CC
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
SHIH, CC
SHEU, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
SHEU, BJ
LE, HM
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509
LE, HM
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1988,
23
(03)
: 878
-
880
←
1
2
3
4
5
→