LOW-PRESSURE VPE OF IN-DOPED ZNSE WITH CONTROLLED ELECTRICAL-PROPERTIES

Effects of In-doping on the electrical and luminescence properties of ZnSe epitaxial layers were investigated. The layers were grown by low-pressure vapor-phase epitaxy (LPVPE) using high purity metallic Zn, Se and In as source materials at 320°C on GaAs(100) substrates in a hydrogen atmosphere of 10-4 Torr. The carrier concentration and the intensity of donor-bound exciton emissions increased significantly with increasing In-cell temperature. A carrier-concentration control in the range of 5 x 1015 -2 x 1018 cm-3 was attained. The In doping introduced deep-level defects as well as shallow donor levels, and ZnSe layers doped excessively became highly resistive due to the compensating deep levels. © 1990.