LOCALIZED VERSUS ITINERANT ELECTRONS AT THE METAL-INSULATOR-TRANSITION IN SI-P

被引:72
作者
LAKNER, M
VONLOHNEYSEN, H
机构
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D O I
10.1103/PhysRevLett.63.648
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O4 [物理学];
学科分类号
0702 ;
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页码:648 / 651
页数:4
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