ISOTHERMAL ANNEALING OF ELECTRON-IRRADIATED N-TYPE SI

[1] DEFECT-IMPURITY RELATIONSHIPS IN ELECTRON-DAMAGED SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 24 - +

[2] EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2433 - &

[3] PENCZER RE, 1968, MAR AM PHYS SOC M BE

[4] SAITO H, 1963, J PHYS SOC JAPAN S3, V18

[1] DEFECT-IMPURITY RELATIONSHIPS IN ELECTRON-DAMAGED SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 24 - +

[2] EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2433 - &

[3] PENCZER RE, 1968, MAR AM PHYS SOC M BE

[4] SAITO H, 1963, J PHYS SOC JAPAN S3, V18