4-POINT SHEET RESISTANCE MEASUREMENTS OF SEMICONDUCTOR DOPING UNIFORMITY

被引：22

作者：

PERLOFF, DS ^{[1
]}

WAHL, FE ^{[1
]}

CONRAGAN, J ^{[1
]}

机构：

[1] SIGNETICS CORP,RES & DEV LAB,SUNNYVALE,CA 94086

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 04期

关键词：

D O I：

10.1149/1.2133355

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：582 / 590

页数：9

共 18 条

[1] PLANAR 4-PROBE TEST STRUCTURE FOR MEASURING BULK RESISTIVITY [J].

BUEHLER, MG ;

THURBER, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :968-974

[2]

BUEHLER MG, 1976, NBS40015 SPEC PUBL, P35

[3]

Crossley P. A., 1973, Journal of Electronic Materials, V2, P465

[4]

DAVID JM, 1976, NBS40019 SPEC PUBL, P44

[5]

DEARNALEY G., 1973, ION IMPLANTATION

[6]

HAM WE, 1976, NBS40015 SPEC PUBL, P25

[7] MONOLITHIC 10-B DIGITAL-TO-ANALOG CONVERTER USING ION-IMPLANTATION [J].

KELSON, G ;

STELLRECHT, HH ;

PERLOFF, DS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC-8 (06) :396-403

[8] AN AC BRIDGE FOR SEMICONDUCTOR RESISTIVITY MEASUREMENTS USING A 4-POINT PROBE [J].

LOGAN, MA .

BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (03) :885-+

[9] 4-POINT PROBE CORRECTION FACTORS FOR USE IN MEASURING LARGE DIAMETER DOPED SEMICONDUCTOR WAFERS [J].

PERLOFF, DS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1745-1750

[10]

PERLOFF DS, 1977, SOLID STATE TECHNOL, V20, P31

← 1 2 →