TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN VAPOR-GROWN GAP

被引：17
|
作者：
WESSELS, BW [1 ]
机构：
[1] GE CORP RES & DEV,SCHENECTADY,NY 12301
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期
关键词：
D O I：
10.1063/1.321855
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2143 / 2146
页数：4
相关论文
共 50 条
  • [11] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER RECOMBINATION VELOCITIES AT GRAIN-BOUNDARIES IN SILICON
    SEAGER, CH
    APPLIED PHYSICS LETTERS, 1982, 41 (09) : 855 - 857
  • [12] SUBSTRATE-TEMPERATURE DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN (ALGA)AS/GAAS MQWS GROWN WITH AS-2 AND AS-4
    CHENG, TS
    DAWSON, P
    LACKLISON, DE
    FOXON, CT
    ORTON, JW
    HUGHES, OH
    HENINI, M
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 841 - 844
  • [13] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER MOBILITY AND RECOMBINATION TIME IN P-TYPE GAAS
    BEYZAVI, K
    LEE, K
    KIM, DM
    NATHAN, MI
    WRENNER, K
    WRIGHT, SL
    APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1268 - 1270
  • [14] IMPROVEMENT OF MINORITY-CARRIER LIFETIME IN GaAsN GROWN BY CHEMICAL BEAM EPITAXY
    Honda, T.
    Inagaki, M.
    Suzuki, H.
    Kojima, N.
    Ohshita, Y.
    Yamaguchi, M.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 2053 - 2056
  • [15] MINORITY-CARRIER LIFETIME MEASUREMENT IN GAAS
    PENCE, IW
    GREILING, PT
    PROCEEDINGS OF THE IEEE, 1974, 62 (07) : 1030 - 1031
  • [16] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON
    AHRENKIEL, RK
    ALJASSIM, MM
    KEYES, B
    DUNLAVY, D
    JONES, KM
    VERNON, SM
    DIXON, TM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (03) : 996 - 1000
  • [17] Sensitization of the minority-carrier lifetime in a photoconductor
    Balberg, I
    Naidis, R
    PHYSICAL REVIEW B, 1998, 57 (12): : R6783 - R6786
  • [18] Dependence of minority-carrier recombination lifetime on surface microroughness in silicon wafers
    Daio, Hiroshi
    Shimura, Fumio
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (12 B):
  • [19] ON THE INJECTION LEVEL DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN DEFECTED SILICON SUBSTRATES
    DEPAUW, P
    MERTENS, R
    VANOVERSTRAETEN, R
    JAIN, SC
    SOLID-STATE ELECTRONICS, 1984, 27 (06) : 573 - &
  • [20] MINORITY-CARRIER LIFETIME IN SILICON PROCESSING
    PAK, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C331 - C331
12345