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- [1] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN VPE GAP-N, TEPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : K205 - K208WOGGON, UWANDEL, KWEINERT, H
- [2] TEMPERATURE-DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURESJOURNAL OF APPLIED PHYSICS, 1995, 78 (07) : 4808 - 4810BERGMAN, JPHALLIN, CJANZEN, E
- [3] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN LOW-RESISTIVITY GAASJOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2775 - 2776KLADIS, DIEUTHYMIOU, PC
- [4] INSTRUMENT MEASURING TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME WITHOUT CONTACTREVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (02): : 210 - 212OHSAWA, AHONDA, KTAKIZAWA, RTOYOKURA, N
- [5] CONCENTRATION-DEPENDENCE OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME IN GAPJOURNAL OF PHYSICS F-METAL PHYSICS, 1974, 7 (13): : 1824 - 1837YOUNG, MLWIGHT, DR
- [6] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN SINGLE-CRYSTAL AND POLYCRYSTALLINE SI SOLAR-CELLSJOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3651 - 3654MATHUR, PCSHARMA, RPSAXENA, PARORA, JD
- [7] MINORITY-CARRIER LIFETIME IN GAP GROWN BY LIQUID-PHASE EPITAXY FOR HIGH-TEMPERATURE APPLICATIONSJOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3709 - 3712GOURLEY, PLDAWSON, LR
- [8] EFFECT OF GAS-PHASE STOICHIOMETRY ON MINORITY-CARRIER DIFFUSION LENGTH IN VAPOR-GROWN GAASAPPLIED PHYSICS LETTERS, 1976, 29 (03) : 141 - 142ETTENBERG, MOLSEN, GHNUESE, CJ
- [9] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIMES IN CZOCHRALSKI SILICON-CRYSTALSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C328 - C329OHSAWA, AHONDA, KTAKIZAWA, RTOYOKURA, N
- [10] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN IRON-DIFFUSED P-TYPE SILICON-WAFERSJOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3077 - 3081HAYAMIZU, YHAMAGUCHI, TUSHIO, SABE, TSHIMURA, F