LASER DAMAGE OF GAAS AND ZNTE AT 1.06 MU

被引：8

作者：

SAM, CL ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

APPLIED OPTICS | 1973年 / 12卷 / 04期

关键词：

D O I：

10.1364/AO.12.000878

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：878 / 879

页数：2

共 50 条

[1] SURFACE DAMAGE OF GAAS FROM 0.694-MU AND 1.06-MU LASER RADIATION
SMITH, JL
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3399 - &
[2] Laser induced damage in GaAs at 1.06 mu m wavelength: Surface effects
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Bansal, SK
Srivastava, GP
OPTICS AND LASER TECHNOLOGY, 1996, 28 (01): : 25 - 34
[3] LASER-INDUCED DAMAGE AND ION EMISSION OF GAAS AT 1.06-MU-M
HUANG, AL
BECKER, MF
WALSER, RM
APPLIED OPTICS, 1986, 25 (21): : 3864 - 3870
[4] Laser-induced damage in InSb at 1.06 mu m wavelength - A comparative study with Ge, Si and GaAs
Kuanr, AV
Bansal, SK
Srivastava, GP
OPTICS AND LASER TECHNOLOGY, 1996, 28 (05): : 345 - 353
[5] LASER DAMAGE IN OPTICAL-MATERIALS AT 1.06 MU-M
WOOD, RM
GEC-JOURNAL OF SCIENCE & TECHNOLOGY, 1979, 45 (03): : 109 - 115
[6] LASER DAMAGE VERSUS ABSORPTANCE OF HIGH REFLECTORS AT 1.06MU-M
CARNIGLIA, CK
ALLEN, TH
LOWDERMILK, WH
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1979, 69 (10) : 1446 - 1446
[7] LASER-INDUCED DAMAGE PROBABILITY AT 1.06 MU-M AND 0.69 MU-M
BASS, M
BARRETT, HH
APPLIED OPTICS, 1973, 12 (04): : 690 - 699
[8] Combined damage effect of GaAs irradiated by 1.06 μm CW and Pulse laser
Natl Univ of Defense Technology, Changsha, China
Qiangjiguang Yu Lizishu, 2 (217-220):
[9] MODULATION OF ACOUSTOELECTRIC DOMAINS BY INTENSE 1.06-MU-M LASER EXCITATION OF ELECTRONS IN GAAS
CELLER, GK
BRAY, R
PHYSICAL REVIEW B, 1976, 13 (12): : 5397 - 5409
[10] MEASUREMENTS AT 1.06 MU-M OF LASER DAMAGE THRESHOLD OF MULTILAYER DIELECTRIC COATINGS
THOMAS, CE
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1976, 66 (02) : 165 - 165

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