VERY HIGH-POWER (425 MW) ALGAAS SQW-GRINSCH RIDGE LASER WITH FREQUENCY-DOUBLED OUTPUT (41 MW AT 428 NM)

被引:37
作者
JAECKEL, H [1 ]
BONA, GL [1 ]
BUCHMANN, P [1 ]
MEIER, HP [1 ]
VETTIGER, P [1 ]
KOZLOVSKY, WJ [1 ]
LENTH, W [1 ]
机构
[1] IBM CORP,DIV RES,ALMADEN RES CTR,SAN JOSE,CA 95120
关键词
D O I
10.1109/3.89978
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a very high-power AlGaAs single quantum well GRINSCH ridge laser operating in a diffraction-limited fundamental transverse mode up to 360 mW at a wavelength of 856 nm. The maximum power output of the laser reached 425 mW and was limited by thermal saturation of the device and not by catastrophic optical mirror damage. These lasers not only exhibit very high power levels, but also show excellent reliability at high output power levels. The extremely high, CW fundamental mode power combined with very low-intensity and optical low-phase distortion as well as low astigmatism render this ridge waveguide laser very suitable for optical storage systems, printers, and direct frequency doubling. These devices have been successfully used for direct frequency doubling of their output in a resonant KNbO3 cavity yielding 41 mW of blue radiation at 428 nm.
引用
收藏
页码:1560 / 1567
页数:8
相关论文
共 37 条
  • [1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY
    AKIMOTO, K
    MIYAJIMA, T
    MORI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L531 - L534
  • [2] ELECTROLUMINESCENCE FROM A ZNSE P-N-JUNCTION FABRICATED BY NITROGEN-ION IMPLANTATION
    AKIMOTO, K
    MIYAJIMA, T
    MORI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L528 - L530
  • [3] HIGH-EFFICIENCY 2ND-HARMONIC GENERATION IN KNBO3 CRYSTALS
    BAUMERT, JC
    GUNTER, P
    MELCHIOR, H
    [J]. OPTICS COMMUNICATIONS, 1983, 48 (03) : 215 - 220
  • [4] INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS
    BLOOD, P
    FLETCHER, ED
    WOODBRIDGE, K
    HEASMAN, KC
    ADAMS, AR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) : 1459 - 1468
  • [5] PHASE-LOCKED ARRAYS OF ANTIGUIDES - MODAL CONTENT AND DISCRIMINATION
    BOTEZ, D
    MAWST, LJ
    PETERSON, GL
    ROTH, TJ
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (03) : 482 - 495
  • [6] BROAD-AREA TANDEM SEMICONDUCTOR-LASER
    CHEN, TR
    MEHUYS, D
    ZHUANG, YH
    MITTELSTEIN, M
    WANG, H
    DERRY, PL
    KAJANTO, M
    YARIV, A
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1468 - 1470
  • [7] ELEWAUT F, 1988, THESIS U GHENT BELGI
  • [8] EFFICIENT GENERATION AT 421 NM BY RESONANTLY ENHANCED DOUBLING OF GAALAS LASER DIODE-ARRAY EMISSION
    GOLDBERG, L
    CHUN, MK
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (03) : 218 - 220
  • [9] A O2W CW LASER WITH BURIED TWIN-RIDGE SUBSTRATE STRUCTURE
    HAMADA, K
    WADA, M
    SHIMIZU, H
    KUME, M
    SUSA, F
    SHIBUTANI, T
    YOSHIKAWA, N
    ITOH, K
    KANO, G
    TERAMOTO, I
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) : 623 - 628
  • [10] HIGH-POWER RIDGE-WAVE-GUIDE ALGAAS GRIN-SCH LASER DIODE
    HARDER, C
    BUCHMANN, P
    MEIER, H
    [J]. ELECTRONICS LETTERS, 1986, 22 (20) : 1081 - 1082