GROWTH OF EPITAXIAL LAYERS OF GALLIUM NITRIDE ON SILICON CARBIDE AND CORUNDUM SUBSTRATES

被引：72

作者：

WICKENDEN, DK

FAULKNER, KR

BRANDER, RW

ISHERWOO.J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 9卷 / 01期

关键词：

D O I：

10.1016/0022-0248(71)90225-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：158 / +

页数：1

共 15 条

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