ELECTRON-BEAM CELL PROJECTION LITHOGRAPHY - A NEW HIGH-THROUGHPUT ELECTRON-BEAM DIRECT-WRITING TECHNOLOGY USING A SPECIALLY TAILORED SI APERTURE

被引：70

作者：

NAKAYAMA, Y ^{[1
]}

OKAZAKI, S ^{[1
]}

SAITOU, N ^{[1
]}

WAKABAYASHI, H ^{[1
]}

机构：

[1] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.585169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron-beam cell projection lithography realizes a high throughput capability suitable for ultra-large-scale integration (ULSI) manufacturing. This method makes it possible to drastically reduce the number of electron-beam exposure shots by utilizing a specially shaped beam. This shaped beam is created by an Si aperture which forms various shapes, coinciding with the array of each unit cell of an ULSI pattern. The aperture also forms a rectangular shape for conventional variable-shaped method in order to create random patterns. An aperture made of a single crystal of Si is fabricated using ULSI process techniques. As the reduction ratio of electron optics is larger than that of an optical stepper, pattern size errors caused by aperture inaccuracies can be reduced significantly.

引用

页码：1836 / 1840

页数：5

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