EFFECTS OF ANNEALING ON GAP STATES IN AMORPHOUS SI FILMS

被引：96
作者：
HASEGAWA, S
YAZAKI, S
SHIMIZU, T
机构：
[1] Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa
来源：
SOLID STATE COMMUNICATIONS | 1978年 / 26卷 / 07期
关键词：
D O I：
10.1016/0038-1098(78)90515-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Annealing behaviors of the activation energy for electrical conduction, the optical gap, and the spin density in amorphous Si are investigated. It is found that the Fermi level shifts downwards with the decrease of the spin density, increasing the decay length of the wave function of localized state at the Fermi level. The downward shift of the Fermi level suggests that the localized states in the upper energy region in the gap are annealed out more easily than those in the lower one. © 1978.
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页码：407 / 410
页数：4
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