ALTERNATING DONOR-LIKE-ACCEPTOR-LIKE CONFIGURATIONALLY BISTABLE DEFECT IN IRRADIATED PHOSPHORUS-DOPED SILICON

被引：7

作者：

AWADELKARIM, OO ^{[1
]}

MONEMAR, B ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.10116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：10116 / 10119

页数：4

相关论文

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