METALLORGANIC VAPOR-PHASE EPITAXY REACTOR FOR INSITU OPTICAL INVESTIGATIONS

被引：2
|
作者：
VAILLE, M [1 ]
FAVRE, R [1 ]
MONTEIL, Y [1 ]
BOUIX, J [1 ]
GIBART, P [1 ]
机构：
[1] UNIV LYON 1,PHYSICOCHIM MINERAL LAB 1,F-69622 VILLEURBANNE,FRANCE
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 1988年 / 59卷 / 01期
关键词：
D O I：
10.1063/1.1139995
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：167 / 171
页数：5
相关论文
共 50 条
  • [1] INSITU OPTICAL STUDIES OF REDUCED TEMPERATURE SILICON VAPOR-PHASE EPITAXY
    ROBBINS, DJ
    PICKERING, C
    YOUNG, IM
    GLASPER, JL
    PIDDUCK, AJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C479 - C479
  • [2] Modeling and process optimization of ZnSe and ZnS epitaxial growth in a vertical metallorganic vapor-phase epitaxy reactor
    Thiandoume, C
    Angermeier, D
    Gorochov, O
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (08) : 2887 - 2891
  • [3] A FLOW CHANNEL REACTOR FOR GAAS VAPOR-PHASE EPITAXY
    WESTPHAL, GH
    SHAW, DW
    HARTZELL, RA
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 324 - 331
  • [4] INSITU SURFACE-ANALYSIS OF THE VAPOR-PHASE EPITAXY OF GAAS
    THEETEN, JB
    HOTTIER, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 450 - 460
  • [5] Optical transitions in cubic GaN grown on GaAs(1 0 0) substrates by metallorganic vapor-phase epitaxy
    Wu, Jun
    Yaguchi, Hiroyuki
    Onabe, Kentaro
    Ito, Ryoichi
    Shiraki, Yasuhiro
    Journal of Crystal Growth, 189-190 : 415 - 419
  • [6] INSITU MASS-SPECTROMETRY STUDY OF VAPOR-PHASE IN A GASB METAL ORGANIC VAPOR-PHASE EPITAXY SYSTEM
    SALESSE, A
    GIANI, A
    GROSSE, P
    BOUGNOT, G
    JOURNAL DE PHYSIQUE III, 1991, 1 (07): : 1267 - 1280
  • [7] Self-organized InAs islands on (100) InP by metallorganic vapor-phase epitaxy
    Helsinki Univ of Technology, Espoo, Finland
    Surf Sci, 1-3 (60-68):
  • [8] Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth
    Voronenkov, Vladislav
    Bochkareva, Natalia
    Zubrilov, Andrey
    Lelikov, Yuri
    Gorbunov, Ruslan
    Latyshev, Philipp
    Shreter, Yuri
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (03):
  • [9] CHARACTERIZATION OF MICROSCOPIC REGION OF GAALAS LAYERS GROWN BY SWITCHED LASER METALLORGANIC VAPOR-PHASE EPITAXY
    MIYOSHI, T
    IIMURA, Y
    IWAI, S
    AOYAGI, Y
    SEGAWA, Y
    NAMBA, S
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 133 - 136
  • [10] Dependence of growth rate of GaN buffer layer on growth parameters by metallorganic vapor-phase epitaxy
    Chinese Acad of Sciences, Beijing, China
    J Cryst Growth, 1-2 (23-27):
12345