PHOTOSENSITIVITY SPECTRUM OF TELLURIUM METAL-INSULATOR-SEMICONDUCTOR STRUCTURES ILLUMINATED WITH POLARIZED-LIGHT

被引:0
|
作者
IVANOV, YL [1 ]
机构
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 04期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:461 / 462
页数:2
相关论文
共 50 条
  • [1] METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    YAMAZAKI, S
    AMERICAN CERAMIC SOCIETY BULLETIN, 1985, 64 (12): : 1585 - 1589
  • [2] METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    YAMAZAKI, S
    AMERICAN CERAMIC SOCIETY BULLETIN, 1984, 63 (08): : 1011 - 1011
  • [3] Light modulation in α-sexithiophene metal-insulator-semiconductor structures
    Fichou, Denis
    Charra, Fabrice
    Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, 1996, 15 (1-4): : 235 - 241
  • [4] IMPURITY PHOTO-ELECTRIC EFFECT IN TELLURIUM METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    IVANOV, YL
    FARBSHTEIN, II
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (11): : 1318 - 1320
  • [5] COLLOQUIUM ON APPLICATION OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    不详
    BULLETIN D INFORMATIONS SCIENTIFIQUES ET TECHNIQUES, 1969, (143): : 67 - &
  • [6] INTERFACE EXCITATIONS IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    EGUILUZ, A
    LEE, TK
    QUINN, JJ
    CHIU, KW
    PHYSICAL REVIEW B, 1975, 11 (12): : 4989 - 4993
  • [7] NEW APPLICATIONS OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    LUNDSTROM, I
    PHYSICA SCRIPTA, 1978, 18 (06): : 424 - 432
  • [8] INVESTIGATION OF GENERATION CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    GORBAN, AP
    LITOVCHENKO, VG
    MOSKAL, DN
    SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1053 - 1059
  • [9] INVERSION CRITERIA FOR THE METAL-INSULATOR-SEMICONDUCTOR TUNNEL STRUCTURES
    WANG, SJ
    FANG, BC
    TZENG, FC
    CHEN, CT
    CHANG, CY
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1080 - 1086
  • [10] Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures
    Frenzel, H.
    von Wenckstem, H.
    Lajn, A.
    Brandt, M.
    Biehne, G.
    Hochmuth, H.
    Lorenz, M.
    Grundmann, M.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 469 - 470