DUAL-CHANNEL STRAINED-LAYER IN GAAS-GAAS-ALGAAS WDM SOURCE WITH INTEGRATED COUPLER BY SELECTIVE-AREA MOCVD

被引：10

作者：

LAMMERT, RM

COCKERILL, TM

FORBES, DV

COLEMAN, JJ

机构：

[1] Microelectronics Laboratory, Materials Research Laboratory, University of Illinois, Urbana, IL 61801

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.329627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective-area metalorganic chemical vapor deposition is used to fabricate a dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler. Threshold currents of 11.5 mA were obtained for 1100 mum long uncoated channels operating cw at room temperature. Both channels can be coupled into a single mode fiber without the need for an external coupler.

引用

收藏

页码：1167 / 1169

页数：3

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