Observation of strong transmission electron microscope contrast from doped layers in InP-based structures.

被引：0

作者：

Hull, R

Moore, M

Bahnck, D

Geva, M

Karlicek, RF

Stevie, FA

Walker, JF

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,BREINIGSVILLE,PA 18031

[3] IBM CORP,E FISHKILL FACIL,HOPEWELL JCT,NY 12533

[4] FEI EUROPE INC,BROOKFIELD BUSINESS CTR,COTTENHAM CB4 4PS,CAMBS,ENGLAND

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have observed strong contrast (similar to 20-50%) between p-doped (similar to 10(18) cm(-3) Zn), n-doped (similar to 10(18) cm(-3) Si) and intrinsic (similar to 10(17) cm(-3) Fe) InP layers in transmission electron microscopy (TEM) of semiconductor laser diode structures, following sample preparation by Ga+ focused ion beam (FIB) sputtering. The operative contrast mechanism is differential ''absorption contrast'', i.e. high angle scattering out of the instrumental image collection system. The critical question is what physical mechanism could produce such large amounts of differential scattering from the dopant atom concentrations similar to 0.001%.

引用

页码：613 / 616

页数：4

共 6 条

[1] EFFECT OF POINT DEFECTS ON ABSORPTION OF HIGH ENERGY ELECTRONS PASSING THROUGH CRYSTALS [J].