EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS

被引：88
作者：
MARINACE, JC
机构：
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期
关键词：
D O I：
10.1147/rd.43.0248
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
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页码：248 / 255
页数：8
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