ELECTRON-IRRADIATION OF GOLD BELOW 2 K

被引:20
|
作者
GWOZDZ, PS [1 ]
KOEHLER, JS [1 ]
机构
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
来源
PHYSICAL REVIEW B | 1973年 / 8卷 / 08期
关键词
D O I
10.1103/PhysRevB.8.3616
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3616 / 3627
页数:12
相关论文
共 50 条
  • [1] ELECTRON-IRRADIATION AND ANNEALING OF GOLD
    GWOZDZ, P
    KOEHLER, JS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 479 - 479
  • [2] ANNEALING EXPERIMENTS ON PURE LEAD AFTER ELECTRON-IRRADIATION AT 4.7 K AND BELOW 3 K
    SCHROEDER, H
    SCHILLING, W
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 243 - 253
  • [3] EFFECT OF ELECTRON-IRRADIATION ON GOLD MIGRATION IN SILICON
    AFONIN, OF
    KOZLOVSKII, VV
    LOMASOV, VN
    PILKEVICH, YY
    PITKEVICH, MV
    ZHURNAL TEKHNICHESKOI FIZIKI, 1979, 49 (11): : 2446 - 2447
  • [4] IMPLANTATION OF GOLD ATOMS INTO SILICON BY MEV ELECTRON-IRRADIATION
    MORI, H
    SAKATA, T
    KOMATSU, M
    YASUDA, H
    MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1993, 4 (2-3): : 137 - 142
  • [5] ELECTRON-IRRADIATION DAMAGE IN IRON AT 20-K
    DURAL, J
    ARDONCEAU, J
    JOUSSET, JC
    JOURNAL DE PHYSIQUE, 1977, 38 (08): : 1007 - 1011
  • [6] ELECTRON-IRRADIATION EXPERIMENTS IN GOLD WITH 2.5-MEV ELECTRONS
    RUAULT, MO
    JOUFFREY, B
    APPLIED PHYSICS LETTERS, 1974, 25 (05) : 265 - 267
  • [7] EFFECT OF ELECTRON-IRRADIATION ON DIFFUSION IN GOLD-SILVER ALLOYS
    SPRENG, DT
    HILLIARD, JE
    KAUFFMAN, JW
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2040 - &
  • [8] EFFECT OF ELECTRON-IRRADIATION ON DIFFUSION IN GOLD-SILVER ALLOYS
    BYSTROV, LN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01): : 53 - 54
  • [9] GAMMA-IRRADIATION AND ELECTRON-IRRADIATION OF SO2
    CHUNG, WH
    SHIN, YM
    WALTZ, WL
    WOODS, RJ
    INTERNATIONAL JOURNAL OF ENVIRONMENTAL STUDIES, 1981, 16 (3-4) : 227 - 228
  • [10] INFLUENCE OF THE ELECTRON-IRRADIATION RATE ON THE ACCUMULATION OF K CENTERS IN SILICON
    KOLESNIKOV, NV
    LOMASOV, NV
    MALKHANOV, SE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02): : 230 - 231