Frequency effects in processing plasmas of the VHF band

被引：42

作者：

Oda, Shunri ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 152, Japan

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1993年 / 2卷 / 01期

关键词：

D O I：

10.1088/0963-0252/2/1/007

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The effect of excitation frequency in processing plasmas of the very-high-frequency band has been studied by plasma diagnostics including Langmuir probe and optical emission spectroscopy. The ECR plasma has been implemented in the VHF (144 MHz) range. Properties of hydrogenated amorphous silicon films have also been studied. High-quality interfaces have been demonstrated through the characteristics of thin-film transistors prepared by VHF plasma CVD.

引用

页码：26 / 29

页数：4

共 16 条

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