STUDIES ON ION-IMPLANTATION AND ELECTRICAL-PROPERTIES OF POLYACETYLENE FILMS

被引：0

作者：

LIN, SH ^{[1
]}

BAO, JR ^{[1
]}

RONG, TW ^{[1
]}

SHENG, KL ^{[1
]}

ZOU, ZY ^{[1
]}

ZHU, XF ^{[1
]}

WANG, WM ^{[1
]}

WAN, HH ^{[1
]}

SHEN, ZQ ^{[1
]}

YANG, MJ ^{[1
]}

机构：

[1] ZHEJIANG UNIV,DEPT CHEM,HANGZHOU 310027,PEOPLES R CHINA

来源：

SCIENCE IN CHINA SERIES B-CHEMISTRY | 1992年 / 35卷 / 01期

关键词：

POLYACETYLENE; ION IMPLANTATION;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effects of ion implantation on polyacetylene films PA have been studied with Ar+, Fe+, Cl+, I+, Na+ and K+ ions in the energy range of 15-30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIR), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.

引用

页码：10 / 18

页数：9

共 50 条

[1] STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS
林森浩
鲍锦荣
荣廷文
盛康龙
邹志宜
朱新芳
王玟珉
万洪和
沈之荃
杨慕杰
Science China Chemistry, 1992, (01) : 10 - 18
[2] THE BEHAVIOR OF MOSAIC BLOCKS AND ELECTRICAL-PROPERTIES OF POLYSILICON UNDER ION-IMPLANTATION
PAVLOV, AP
PAVLOV, PV
TETELBAUM, DI
SHENGUROV, VG
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1993, 125 (1-3): : 181 - 184
[3] THE EFFECTS OF HOT ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PRODUCED BY CHEMICAL-VAPOR-DEPOSITION METHOD
SATOH, T
KANOH, H
SUGIURA, O
MATSUMURA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12B): : L2077 - L2079
[4] ION-IMPLANTATION OF DIAMOND AND DIAMOND FILMS
PRAWER, S
DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 862 - 872
[5] Effect of nitrogen ion-implantation on the tribological properties and hardness of TiN films
Manory, RR
Li, CL
Fountzoulas, C
Demaree, JD
Hirvonen, JK
Nowak, R
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 253 (1-2): : 319 - 327
[6] Ion-Implantation Studies on Perpendicular Media
Gaur, Nikita
Maurer, Siegfried L.
Nunes, Ronald W.
Piramanayagam, S. N.
Bhatia, C. S.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (03) : 2619 - 2622
[7] Optical studies of ion-implantation centres in silicon
Davies, G
Harding, R
Jin, T
Mainwood, A
Leung-Wong, J
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 (1-4): : 1 - 9
[8] Ion-implantation of erbium to the nanocrystalline diamond thin films
Nekvindova, P.
Babchenko, O.
Cajzl, J.
Kromka, A.
Mackova, A.
Malinsky, P.
Oswald, J.
Prajzler, V.
Remes, Z.
Varga, M.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2016, 18 (7-8): : 679 - 684
[9] SUPERCONDUCTING AND NORMAL PROPERTIES OF NBN PRODUCED BY ION-IMPLANTATION OF NIOBIUM THIN-FILMS
JOHNSON, JP
MOULTON, WG
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 113 (04): : 283 - 296
[10] STRUCTURE AND ELECTRICAL-PROPERTIES OF POLYACETYLENE YIELDING A CONDUCTIVITY OF 105 S/CM
TSUKAMOTO, J
TAKAHASHI, A
KAWASAKI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01): : 125 - 130

← 1 2 3 4 5 →