RESIDUAL-STRESSES IN GALLIUM-ARSENIDE SINGLE-CRYSTALS

被引：0
|
作者：
KOVALENKO, VF
LISOVENKO, VD
MARONCHUK, IE
MILVIDSKII, MG
ROGULIN, VY
TUZOVSKII, KA
SHEPEL, LG
机构：
来源：
INORGANIC MATERIALS | 1990年 / 26卷 / 02期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：190 / 193
页数：4
相关论文
共 50 条
  • [31] TEMPERATURE EXPANSION OF HIGH-PRESSURE TREATED SILICON AND GALLIUM-ARSENIDE SINGLE-CRYSTALS
    BAKMISIUK, J
    MISIUK, A
    ADAMCZEWSKA, J
    JABLONSKI, J
    MOROZ, A
    MORAWSKI, A
    ACTA PHYSICA POLONICA A, 1988, 73 (03) : 505 - 508
  • [32] MECHANISM OF FORMATION OF AN INHOMOGENEITY IN UNDOPED GALLIUM-ARSENIDE SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD
    KARTAVYKH, AV
    GRISHINA, SP
    MILVIDSKII, MG
    RYTOVA, NS
    STEPANTSOVA, IV
    YUROVA, ES
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 633 - 637
  • [33] SPIN-LATTICE RELAXATION IN P-TYPE GALLIUM-ARSENIDE SINGLE-CRYSTALS
    ZERROUATI, K
    FABRE, F
    BACQUET, G
    BANDET, J
    FRANDON, J
    LAMPEL, G
    PAGET, D
    PHYSICAL REVIEW B, 1988, 37 (03): : 1334 - 1341
  • [34] ANALYSIS OF ARSENIC LOSSES DURING GROWTH OF GALLIUM-ARSENIDE SINGLE-CRYSTALS BY CZOCHRALSKI METHOD
    NOSOVSKII, AM
    OSVENSKII, VB
    INORGANIC MATERIALS, 1990, 26 (03) : 407 - 410
  • [35] BONDING OF GALLIUM-ARSENIDE CRYSTALS
    CHU, TL
    SMELTZER, RK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) : 846 - 846
  • [36] COILED CRYSTALS OF GALLIUM-ARSENIDE
    ADDAMIANO, A
    JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 351 - +
  • [37] EFFECT OF MELT COMPOSITION ON THE ELECTRICAL-PROPERTIES AND STRUCTURE OF UNDOPED GALLIUM-ARSENIDE SINGLE-CRYSTALS
    KOVALCHUK, IA
    MARKOV, AV
    MILVIDSKII, MG
    INORGANIC MATERIALS, 1988, 24 (02) : 253 - 255
  • [38] MODEL OF RESIDUAL PHOTOCONDUCTIVITY - GALLIUM-ARSENIDE
    DOBREGO, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1309 - 1310
  • [39] RESIDUAL LATTICE ABSORPTION IN GALLIUM-ARSENIDE
    LIPSON, HG
    BENDOW, B
    YUKON, SP
    SOLID STATE COMMUNICATIONS, 1977, 23 (01) : 13 - 15
  • [40] EFFECT OF HEAT-TREATMENT ON PERFECTION OF STRUCTURE OF SINGLE-CRYSTALS OF TE-DOPED GALLIUM-ARSENIDE
    MILVIDSKII, MG
    OSVENSKI.VB
    NOVIKOV, AG
    FOMIN, VG
    GRISHINA, SP
    KRISTALLOGRAFIYA, 1973, 18 (04): : 826 - 829
12345