RESIDUAL-STRESSES IN GALLIUM-ARSENIDE SINGLE-CRYSTALS

[1] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (05) : 143 - &

[2] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 111 - 124

[3] CORRELATION OF GAAS LATTICE-PARAMETER TO GROWTH AND ANNEALING CONDITIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 656 - 658

[4] MARKOV AV, 1986, 2ND C PHYS TECHN GAA

[5] MARKOV AV, 1986, FIZ TEKH POLUPROV, V20, P154

[6] Mil'vidskii M. G., 1984, STRUCTURAL DEFECTS S

[7] NIKITENKO VI, 1962, STRESSES DISLOCATION, P191

[8] DEPENDENCE OF LATTICE-PARAMETER ON ELASTIC STRAIN AND COMPOSITION IN UNDOPED CZOCHRALSKI GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 975 - 977

[9] PEKA GP, 1986, LUMINESCENCE METHODS, P152

[10] PHOTO-LUMINESCENCE INVESTIGATION OF BAND AROUND 1.41 EV IN HEATED N-GAAS SAMPLES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3458 - 3463

[1] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (05) : 143 - &

[2] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 111 - 124

[3] CORRELATION OF GAAS LATTICE-PARAMETER TO GROWTH AND ANNEALING CONDITIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 656 - 658

[4] MARKOV AV, 1986, 2ND C PHYS TECHN GAA

[5] MARKOV AV, 1986, FIZ TEKH POLUPROV, V20, P154

[6] Mil'vidskii M. G., 1984, STRUCTURAL DEFECTS S

[7] NIKITENKO VI, 1962, STRESSES DISLOCATION, P191

[8] DEPENDENCE OF LATTICE-PARAMETER ON ELASTIC STRAIN AND COMPOSITION IN UNDOPED CZOCHRALSKI GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 975 - 977

[9] PEKA GP, 1986, LUMINESCENCE METHODS, P152

[10] PHOTO-LUMINESCENCE INVESTIGATION OF BAND AROUND 1.41 EV IN HEATED N-GAAS SAMPLES [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3458 - 3463