INFLUENCE OF GAIN NONLINEARITIES ON THE LINEWIDTH ENHANCEMENT FACTOR IN SEMICONDUCTOR-LASERS

被引：11

作者：

MORTHIER, G

VANKWIKELBERGE, P

BUYTAERT, F

BAETS, R

机构：

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1990年 / 137卷 / 01期

关键词：

D O I：

10.1049/ip-j.1990.0007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonlinear gain saturation is shown to result in a power dependence of the linewidth enhancement factor. This can explain a linewidth rebroadening or saturation at high power levels in semiconductor lasers, even if no side modes are considered.

引用

页码：30 / 32

页数：3

共 17 条

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