MODEL FOR INTERFACE STATES IN SILICON/SILICON DIOXIDE STRUCTURE

被引：9
作者：
CHENG, YC
机构：
来源：
SURFACE SCIENCE | 1970年 / 23卷 / 02期
关键词：
D O I：
10.1016/0039-6028(70)90168-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
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页码：432 / &
相关论文
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