MOCVD GROWTH AND PL-CHARACTERISTICS OF ND DOPED GAAS

被引：14

作者：

NAKAGOME, H

TAKAHEI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.2098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2098 / L2100

页数：3

共 10 条

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