Patterned Ga2O3 nanowires synthesized by CVD method for High- performance self-powered ultraviolet photodetector

High-performance and energy-efficient ultraviolet photodetectors play a critical role in civilian and military fields. Here, patterned growth of highly crystalline straight Ga2O3 nanowires on p-type GaN epitaxial film wafer substrate is achieved by bottom-up technology using an economical chemical vapor deposition method. A self-powered ultraviolet photodetector based on GaN/Ga2O3 nanowires p-n junction for broadband UV detection is constructed by combining spin coating Poly(methyl methacrylate) as an in-sulating layer and magnetic sputtering an Au thin film as top transparent conductive electrode. This na-nowires-film structure device exhibits excellent performance under zero bias voltage, including considerable responsivity of 960 mA W-1, high detectability of 3.82 x 1013 Jones, ultrahigh ultraviolet/visible inhibition ratio (R254 nm/R400 nm) of 7.92 x 103, fast rise/decay time of 4/12 ms and a high photo-to-dark current ratio greater than 104. The self-powered property under zero bias is attributed to the built-in electric field formed between the p-GaN film and the n-Ga2O3 nanowires, which creates a driving force for the rapid separation of photo-generated carriers. The high-performance mainly credits to the device's ex-cellent UV light utilization efficiency and unique interfacial engineering of the p-n junction. This work provides a new avenue for the application of Ga2O3 nanowires in high-performance p-n junction self-powered photodetectors that can operate in harsh environments where it is inconvenient to transmit electric power.& COPY; 2022 Elsevier B.V. All rights reserved.