LIGHT-INDUCED DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON - A DETAILED EXAMINATION USING JUNCTION-CAPACITANCE METHODS

被引：17

作者：

MAHAVADI, KK ^{[1
]}

ZELLAMA, K ^{[1
]}

COHEN, JD ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.35.7776

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7776 / 7779

页数：4

共 13 条

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[6]

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[8] KINETICS OF THE METASTABLE OPTICALLY INDUCED ELECTRON-SPIN-RESONANCE IN A-SI-H [J].

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[9] DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].

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