CRYSTALLIZATION OF SPUTTER-DEPOSITED AMORPHOUS TI-52AT-PERCENT-AL ALLOY

被引：15

作者：

ABE, T ^{[1
]}

AKIYAMA, S ^{[1
]}

ONODERA, H ^{[1
]}

机构：

[1] NATL RES INST MET,MEGURO KU,TOKYO 153,JAPAN

来源：

ISIJ INTERNATIONAL | 1994年 / 34卷 / 05期

关键词：

CRYSTALLIZATION; AMORPHOUS; METASTABLE PHASE; TI-52AT-PERCENT-AL ALLOY; DRIVING FORCE; NUCLEATION FREQUENCY;

D O I：

10.2355/isijinternational.34.429

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The crystallization process of amorphous Ti-52at%Al alloy was studied using sputter deposited materials. The crystallization occurred at about 800 K accompanying the abrupt drop in an electrical resistivity vs. temperature curve. From changes in X-ray and electron diffraction patterns due to annealing at 800 K, the crystallization sequence was represented as Amorphous (Ti-52at%Al) -alpha(hcp) -alpha2(DO19) -gamma(L1(o)). From the analyses of lattice parameter, the crystallization was considered to be an isoconcentrational process. The formation of metastable phases in preference to the stable gamma(L1(0)) one was well predicted by the kinetic analysis in terms of relative nucleation rate assuming that the free energy of amorphous phase was lower than that of undercooled liquid by 3.5 kJ/mol.

引用

页码：429 / 434

页数：6

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