NEW FERMI ENERGY PINNING BEHAVIOR OF AU ON GAAS (110) SUGGESTING INCREASED SCHOTTKY-BARRIER HEIGHTS ON N-TYPE GAAS

被引：44
作者：
SKEATH, P
SU, CY
HINO, I
LINDAU, I
SPICER, WE
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期
关键词：
D O I：
10.1063/1.92718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：349 / 351
页数：3
相关论文
共 16 条
[1]   MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES [J].
BRILLSON, LJ ;
MARGARITONDO, G ;
STOFFEL, NG ;
BAUER, RS ;
BACHRACH, RZ ;
HANSSON, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :880-885
[2]  
BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[3]   PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].
CHYE, PW ;
LINDAU, I ;
PIANETTA, P ;
GARNER, CM ;
SU, CY ;
SPICER, WE .
PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559
[4]  
Kim H.B., 1975, I PHYS C SER LONDON, V24, P307
[5]  
Milnes A., 1973, DEEP IMPURITIES SEMI
[6]   VALENCE BAND STUDIES OF CLEAN AND OXYGEN EXPOSED GAAS(110) SURFACES [J].
PIANETTA, P ;
LINDAU, I ;
GREGORY, PE ;
GARNER, CM ;
SPICER, WE .
SURFACE SCIENCE, 1978, 72 (02) :298-320
[7]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[8]   VARIATION OF SCHOTTKY-BARRIER ENERGY WITH INTERDIFFUSION IN AU AND NI-AU-GE FILMS ON GAAS [J].
ROBINSON, GY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :884-887
[9]  
SHISHIYA.FS, 1966, FIZ TVERD TELA+, V8, P1053
[10]   BONDING OF AL AND GA TO GAAS(110) [J].
SKEATH, P ;
LINDAU, I ;
SU, CY ;
CHYE, PW ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :511-516
12