INFLUENCE OF HETEROINTERFACE ATOMIC-STRUCTURE AND DEFECTS ON 2ND-HARMONIC GENERATION

被引：40

作者：

YEGANEH, MS ^{[1
]}

QI, J ^{[1
]}

YODH, AG ^{[1
]}

TAMARGO, MC ^{[1
]}

机构：

[1] BELLCORE, RED BANK, NJ 07701 USA

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.69.3579

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Second-harmonic spectroscopy is shown to be sensitive to interfacial electronic traps, lattice relaxation, and buried surface reconstruction in ZnSe/GaAs(001) heterostructures. Newly developed photomodulation-second-harmonic-generation experiments reveal that the interfacial region contains predominantly hole traps, and that the density of these traps is substantially lower for 3 x 1 buried surface reconstructed samples.

引用

页码：3579 / 3582

页数：4

共 26 条

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