OPTICAL-PROPERTIES OF AIN EPITAXIAL THIN-FILMS IN THE VACUUM ULTRAVIOLET REGION

被引：197

作者：

YAMASHITA, H ^{[1
]}

FUKUI, K ^{[1
]}

MISAWA, S ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.326007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical absorption of AlN thin films shows a knee" structure at 6.2 eV and an intense band at 7.8 eV. The structure at 6.2 eV is interpreted as excitonic absorptions due to transitions across the direct energy gap of about 6.2 eV. Dichroism observed at the absorption edge indicates that the transition Γ1v-Γ1c (E∥c) is of lower energy than the transition Γ6v-Γ1c (E⊥c). Strong dichroism in the 7-8-eV region is thought to cause the birefringence of AlN."

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页码：896 / 898

页数：3

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