STRUCTURE AND ELECTRICAL-PROPERTIES OF INTERFACES BETWEEN SILICON FILMS AND N+ SILICON-CRYSTALS

被引：5
|
作者：
OGAWA, S
OKUDA, S
YOSHIDA, T
KOUZAKI, T
TSUKAMOTO, K
SINCLAIR, R
机构：
[1] MATSUSHITA TECHNO RES INC,MORIGUCHI,OSAKA 570,JAPAN
[2] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期
关键词：
D O I：
10.1063/1.343101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：668 / 671
页数：4
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