THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS

被引:41
作者
BARDEEN, J
机构
来源
BELL SYSTEM TECHNICAL JOURNAL | 1950年 / 29卷 / 04期
关键词
D O I
10.1002/j.1538-7305.1950.tb03649.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:469 / 495
页数:27
相关论文
共 6 条
[1]   PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].
BARDEEN, J ;
BRATTAIN, WH .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (02) :239-277
[2]   HOLE INJECTION IN GERMANIUM QUANTITATIVE STUDIES AND FILAMENTARY TRANSISTORS [J].
SHOCKLEY, W ;
PEARSON, GL ;
HAYNES, JR .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :344-366
[3]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[4]  
SUHL H, 1948, PHYS REV, V74, P232
[5]  
TORREY HC, 1949, CRYSTAL RECTIFIERS, P372
[6]  
VANROOSBROECK W, 1950, BELL SYST T, V29