CONTROL OF FIXTURING-INDUCED DISTORTION IN X-RAY MASKS

被引：14

作者：

WILSON, AD ^{[1
]}

LAPADULA, C ^{[1
]}

SILVERMAN, JP ^{[1
]}

VISWANATHAN, R ^{[1
]}

VOELKER, H ^{[1
]}

FAIR, R ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1705 / 1708

页数：4

共 8 条

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[6]

Viswanathan R., 1989, Microelectronic Engineering, V9, P93, DOI 10.1016/0167-9317(89)90021-X

[7] FULLY SCALED 0.5 MU-M METAL-OXIDE SEMICONDUCTOR CIRCUITS BY SYNCHROTRON X-RAY-LITHOGRAPHY - MASK FABRICATION AND CHARACTERIZATION [J].

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SEEGER, D ;

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[8]

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