EFFECT OF ANNEAL AMBIENT ON IMPLANTED GAAS AND OCCURRENCE OF COMPENSATED REGIONS IN SI IMPLANTS

被引：4

作者：

ANTELL, GR ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 08期

关键词：

D O I：

10.1063/1.89435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：432 / 434

页数：3

共 8 条

[1]

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PEARSON, GL .

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[4] COMPARISON OF GROUP-4 AND GROUP-6 DOPING BY IMPLANTATION IN GAAS [J].

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[5] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

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HURWITZ, CE .

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[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

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[7] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].

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[8]

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