LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES

被引：32

作者：

FORREST, SR

CAMLIBEL, I

KIM, OK

STOCKER, HJ

ZUBER, JR

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 11期

关键词：

D O I：

10.1109/EDL.1981.25434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：283 / 285

页数：3

共 12 条

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