共 25 条
[1]
METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978, 15 (04)
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[2]
BACHRACH RZ, 1978, 14TH P INT C PHYS SE, P1073
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SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE
[J].
NUCLEAR INSTRUMENTS & METHODS,
1978, 152 (01)
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[5]
CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979, 16 (05)
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[7]
PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
[J].
PHYSICAL REVIEW B,
1978, 18 (10)
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[8]
EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB
[J].
PHYSICAL REVIEW B,
1978, 17 (06)
:2682-2684
[9]
SYNCHROTRON RADIATION AS A NEW TOOL WITHIN PHOTON-BEAM TECHNOLOGY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1975, 12 (06)
:1123-1127