INTERACTION BETWEEN MONOLITHIC, JUNCTION-ISOLATED LATERAL INSULATED-GATE BIPOLAR-TRANSISTORS

被引：15

作者：

CHOW, TP ^{[1
]}

PATTANAYAK, DN ^{[1
]}

BALIGA, BJ ^{[1
]}

ADLER, MS ^{[1
]}

HENNESSY, WA ^{[1
]}

LOGAN, CE ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 02期

关键词：

D O I：

10.1109/16.69911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The static and dynamic interaction between monolithically intergrated n- and p-channel, high-voltage LIGBT's are studied. Even though the steady-state current that flows into the emitters of adjacent devices in the ON-state is small (< 5%), there are substantial (as much as 40%) current surges during the turn-on and turn-off transients. Also, the emitter areas also act as minority-carrier injectors during the last phase of the turn-off process. Similar observations were made on LIGBT's with collector shorts and HSINFET's despite their faster turn-off times.

引用

页码：310 / 315

页数：6

共 8 条

[1] THE EFFECT OF SUBSTRATE DOPING ON THE PERFORMANCE OF ANODE-SHORTED N-CHANNEL LATERAL INSULATED-GATE BIPOLAR-TRANSISTORS [J].