CARRIER-INDUCED CHANGE IN REFRACTIVE-INDEX OF INP, GAAS, AND INGAASP

被引：846

作者：

BENNETT, BR

SOREF, RA

DELALAMO, JA

机构：

[1] USAF,ROME AIR DEV CTR,SOLID STATE SCI DIRECTORATE,BEDFORD,MA 01731

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 01期

关键词：

D O I：

10.1109/3.44924

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have theoretically estimated the change in refractive index Δn produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 1016/cm3 to 1019cm3 and photon energies of 0.8 to 2.0 eV were considered. Predictions of Δ n are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10−2 are predicted for carrier concentrations of I018/cm3, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials. © 1990 IEEE

引用

页码：113 / 122

页数：10

共 40 条

[1] BAND-GAP NARROWING DUE TO MANY-BODY EFFECTS IN SILICON AND GALLIUM-ARSENIDE [J].