ULTIMATE SCALING LIMITS FOR HIGH-FREQUENCY GAAS-MESFETS

被引：11

作者：

GOLIO, JM

机构：

[1] WATKINS JOHNSON CO,MICROWAVE TUNABLE DEVICES SECT,PALO ALTO,CA

[2] ARIZONA STATE UNIV,ELECT ENGN,TEMPE,AZ 85287

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

D O I：

10.1109/16.3334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：839 / 848

页数：10

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