MODELING DEVICE ISOLATION IN HIGH-DENSITY CMOS

被引：3

作者：

CHEN, JY ^{[1
]}

SNYDER, DE ^{[1
]}

机构：

[1] SCICOM ASSOCIATES,SEATTLE,WA 98118

来源：

关键词：

D O I：

10.1109/EDL.1986.26295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：64 / 65

页数：2

共 50 条

[1] MODELING DEVICE ISOLATION IN HIGH-DENSITY CMOS.
Xerox, Palo Alto, CA, USA, Xerox, Palo Alto, CA, USA
Electron device letters, 1986, EDL-7 (02): : 64 - 65
[2] DEVICE ISOLATION IN HIGH-DENSITY LOCOS-ISOLATED CMOS
LEWIS, AG
CHEN, JY
MARTIN, RA
HUANG, TY
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1337 - 1345
[3] DEVICE CHARACTERIZATION OF A HIGH-DENSITY HALF-MICRON CMOS PROCESS
WOERLEE, PH
JUFFERMANS, CAH
LIFKA, H
WALKER, AJ
POORTER, T
MERKSEPPINGBROEK, HJH
LANSINK, FMO
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 33 - 36
[4] A HIGH-DENSITY CMOS PROCESS
LUSCHER, RE
DEZALDIVAR, JS
ISSCC DIGEST OF TECHNICAL PAPERS, 1985, 28 : 260 - 261
[5] Modeling neutron ionization effects on high-density CMOS circuit elements
Zebrev G.I.
Russian Microelectronics, 2006, 35 (3) : 185 - 196
[6] CMOS FOR HIGH-DENSITY GATE ARRAYS
ZLAMAL, W
ELECTRONICS AND POWER, 1984, 30 (11-1): : 874 - 877
[7] HIGH-DENSITY CMOS GATE ARRAYS
MULLIN, M
ELECTRONIC DESIGN, 1986, 34 (06) : 86 - &
[8] HIGH-DENSITY CMOS ROM ARRAYS
STEWART, RG
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) : 502 - 506
[9] TOWARD GREATER MINIATURIZATION WITH HIGH-DENSITY CMOS
HAUER, D
KOURY, R
MACHINE DESIGN, 1976, 48 (28) : 130 - 133
[10] A HIGH-DENSITY CMOS INVERTER WITH STACKED TRANSISTORS
COLINGE, JP
DEMOULIN, E
ELECTRON DEVICE LETTERS, 1981, 2 (10): : 250 - 251