INASSB P-N-JUNCTION LIGHT-EMITTING-DIODES GROWN BY LIQUID-PHASE EPITAXY

被引：7

作者：

MAO, Y ^{[1
]}

KRIER, A ^{[1
]}

机构：

[1] UNIV LANCASTER,SCH PHYS & MAT,DIV APPL PHYS,LANCASTER LA1 4YB,ENGLAND

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 05期

关键词：

EPITAXIAL GROWTH; LUMINESCENCE;

D O I：

10.1016/0022-3697(94)00264-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The liquid phase epitaxial growth technique was used to grow InAsSb p-n junctions on M-GaSb substrates from an Sb-rich solution. The electrical and optical properties of these diodes were investigated in the temperature range 80-300 K. Electroluminescence (EL) emission near 4.2 mu m was readily observed from our homojunction diodes. The effects of zinc doping on the diode electrical properties and electroluminescence quantum efficiency were also investigated. The I-V characteristics and EL efficiency of these p-n InAsSb/N-GaSb diodes were compared with those of n-InAsSb/N-GaSb isotype heterojunction diodes.

引用

页码：759 / 766

页数：8

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