BOUND EXCITON RECOMBINATION IN BERYLLIUM-DOPED SILICON

被引：43

作者：

HENRY, MO

LIGHTOWLERS, EC

KILLORAN, N

DUNSTAN, DJ

CAVENETT, BC

机构：

[1] UNIV LONDON KINGS COLL,WHEATSTONE PHYS LAB,LONDON WC2R 2LS,ENGLAND

[2] UNIV HULL,DEPT PHYS,HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 10期

关键词：

D O I：

10.1088/0022-3719/14/10/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L255 / L261

页数：7

共 15 条

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[9] FINE-STRUCTURE IN BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINUM-DOPED SILICON [J].

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