Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

被引：2

作者：

Zhang Jin ^{[1
]}

Liu Yuling ^{[1
]}

Yan Chenqi ^{[1
]}

He Yangang ^{[1
]}

Gao Baohong ^{[1
]}

机构：

[1] Hebei Univ Technol, Tianjin Key Lab Elect Mat & Devices, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 04期

关键词：

chemical mechanical planarization (CMP); high-k metal gate (HKMG); defectivity control; surface morphology;

D O I：

10.1088/1674-4926/37/4/046001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The replacement metal gate (RMG) defectivity performance control is very challenging in high-k metal gate (HKMG) chemical mechanical polishing (CMP). In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad, pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.

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页数：5

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