AN ANALYTICAL EXPRESSION FOR THE EVALUATION OF LEAKAGE CURRENT IN THE INTEGRATED GATED-DIODE ELECTROMETER

被引：2
作者：
CARVER, GP
BUEHLER, MG
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 12期
关键词：
D O I：
10.1109/T-ED.1980.20259
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2245 / 2252
页数：8
相关论文
共 14 条
[1]  
CARVER GP, 1979, EL SOC EXT ABSTR
[2]   LEAKAGE STUDIES IN HIGH-DENSITY DYNAMIC MOS MEMORY DEVICES [J].
CHATTERJEE, PK ;
TAYLOR, GW ;
TASCH, AF ;
FU, HS .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :486-498
[3]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[4]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
[5]   RADIATION EFFECTS ON SILICON CHARGE-COUPLED-DEVICES [J].
KILLIANY, JM .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1978, 1 (04) :353-365
[6]   COMPARISON OF LEAKAGE CURRENTS IN ION-IMPLANTED AND DIFFUSED P-N-JUNCTIONS [J].
KIRCHER, CJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2167-2173
[7]   INFLUENCE OF SUBSTRATE CURRENT ON HOLD-TIME CHARACTERISTICS OF DYNAMIC MOS ICS [J].
KUDOH, O ;
TSURUMI, M ;
YAMANAKA, H ;
WADA, T .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (02) :235-239
[8]  
LINHOLM LW, 1979, NOV P MEAS SCI C, P129
[9]  
LONKY ML, 1975, ELECTR SOC EXT ABSTR
[10]  
MCCARTHY D, 1978, EL SOC EXT ABSTR
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