PRESWITCHING ELECTRICAL PROPERTIES, FORMING, AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICES

被引：72
作者：
BOSNELL, JR
THOMAS, CB
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 11期
关键词：
D O I：
10.1016/0038-1101(72)90047-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1261 / &
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