PROPOSAL FOR STRAINED TYPE-II SUPERLATTICE INFRARED DETECTORS

被引：723

作者：

SMITH, DL ^{[1
]}

MAILHIOT, C ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2545 / 2548

页数：4

共 22 条

[1] OPTICAL-ABSORPTION AND X-RAY-DIFFRACTION IN NARROW-BAND-GAP INAS/GASB SUPERLATTICES [J].

ARCH, DK ;

WICKS, G ;

TONAUE, T ;

STAUDENMANN, JL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) :3933-3935

[2] INTERBAND OPTICAL-TRANSITIONS IN GAAS-GA1-XALXAS AND INAS-GASB SUPERLATTICES [J].

CHANG, YC ;

SCHULMAN, JN .

PHYSICAL REVIEW B, 1985, 31 (04) :2069-2079

[3] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

GOBELI, GW ;

ALLEN, FG .

PHYSICAL REVIEW, 1965, 137 (1A) :A245-&

[4]

HARRISON WA, 1985, J VAC SCI TECHNOL B, V3, P1232

[5] MAGNETIC FIELD-INDUCED SEMIMETAL-TO-SEMICONDUCTOR TRANSITION IN INAS-GASB SUPER-LATTICES [J].

KAWAI, NJ ;

CHANG, LL ;

SAIHALASZ, GA ;

CHANG, CA ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :369-371

[6] BARRIER CONTROL AND MEASUREMENTS - ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :433-439

[7] ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES [J].

MAILHIOT, C ;

SMITH, DL .

PHYSICAL REVIEW B, 1987, 35 (03) :1242-1259

[8] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .2. APPLICATION TO GA1-XINXAS-AL1-YINYAS(100) SUPERLATTICES [J].

MAILHIOT, C ;

SMITH, DL .

PHYSICAL REVIEW B, 1986, 33 (12) :8360-8372

[9] CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY [J].

MCCALDIN, JO ;

MCGILL, TC ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1976, 36 (01) :56-58

[10] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

← 1 2 3 →