GENERATION AND PROPAGATION OF DEFECTS IN INDIUM-ANTIMONIDE

被引:13
作者
WALTER, HU [1 ]
机构
[1] UNIV ALABAMA,DEPT PHYS,HUNTSVILLE,AL 35807
关键词
D O I
10.1149/1.2133276
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
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页码:250 / 258
页数:9
相关论文
共 32 条
[1]   ON THE MECHANICAL PROPERTIES OF INDIUM ANTIMONIDE [J].
ALLEN, JW .
PHILOSOPHICAL MAGAZINE, 1957, 2 (24) :1475-&
[2]  
BARTH H, 1958, Z NATURFORSCH PT A, V13, P792
[3]  
BILLIG E, 1956, P R SOC LONDON A, V235, P39
[4]   SCHATTEN VON VERSETZUNGSLINIEN IM RONTGEN-DIAGRAMM [J].
BORRMANN, G ;
HARTWIG, W ;
IRMLER, H .
ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1958, 13 (05) :423-+
[5]   GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474
[6]  
Erofeeva S. A., 1975, Soviet Physics - Solid State, V16, P2076
[7]   EFFECT OF THE POLARITY OF THE III-V INTERMETALLIC COMPOUNDS ON ETCHING [J].
FAUST, JW ;
SAGAR, A .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :331-333
[8]   ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :433-436
[9]   ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :169-&
[10]   CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433