DC THERMAL-MODEL OF SEMICONDUCTOR-DEVICE PRODUCES CURRENT FILAMENTS AS STABLE CURRENT DISTRIBUTIONS

被引:6
作者
OLSON, HM [1 ]
机构
[1] BELL TEL LABS INC,READING,PA 19604
关键词
D O I
10.1109/T-ED.1977.18902
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1177 / 1184
页数:8
相关论文
共 29 条
[11]  
Gibbons G., 1973, AVALANCHE DIODE MICR
[12]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].
GOETZBERGER, A ;
SCARLETT, RM ;
HAITZ, RH ;
MCDONALD, B .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+
[13]   SPACE-CHARGE-LIMITED CURRENT INSTABILITIES IN N+-PI-N+ SILICON DIODES [J].
HAGENLOCHER, AK ;
CHEN, WT .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) :533-+
[14]   FILAMENTARY THERMAL INSTABILITIES IN IMPATT DIODES [J].
HOLWAY, LH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :80-86
[15]  
HOLWAY LH, 1926, IEEE T ELECTRON DEVI, V23, P1304
[16]  
KLEIN N, 1969, ADV ELECTRONICS ELEC, V26
[18]  
Morse PM, 1953, METHODS THEORETICAL, V2
[19]  
MORSE PM, 1953, METHODS THEORETICAL, V1
[20]   CURRENT RUNAWAY AND AVALANCHE EFFECTS IN N-CDTE [J].
OLIVER, MR ;
MCWHORTER, AL ;
FOYT, AG .
APPLIED PHYSICS LETTERS, 1967, 11 (04) :111-+